TS13005CK high voltage npn transistor 1/5 version: a13 to - 126 product summary bv ceo 400v bv cbo 700v i c 3a v ce(sat) 0.17v @ i c =1a, i b =0.25a features no need to interest an hfe value because of low variable storage-time spread even though comer spirit product. low base drive requirement block diagram application ballast lighting charger ordering information part no. package packing TS13005CK c0g to-126 50pcs / tube note: g denote for halogen free product absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 700 v collector-emitter voltage @ v be =0v v ces 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current i c 3 a collector peak current (tp <5ms) i cm 6 a base current i b 1.5 a base peak current (tp <5ms) i bm 3 a power total dissipation @ tc=25oc p dtot 20 w maximum operating junction temperature t j +150 o c storage temperature range t stg -55 to +150 o c thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 6.25 o c/w pin definition : 1. base 2. collector 3. emitter
TS13005CK high voltage npn transistor 2/5 version: a13 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static collector-base voltage i c =1ma, i b =0 bv cbo 700 -- -- v collector-emitter breakdown voltage i c =10ma, i e =0 bv ceo 400 -- -- v emitter-base breakdown voltage i e =1ma, i c =0 bv ebo 9 -- -- v collector cutoff current v cb =700v, i e =0 i cbo -- -- 10 ua collector cutoff current v ce =400v, i b =0 i ceo -- -- 10 ua emitter cutoff current v eb =7v, i c =0 i ebo -- -- 10 ua collector-emitter saturation voltage i c =0.4a, i b =0.1a v ce(sat)1 -- 0.10 0.7 v i c =1a, i b =0.25a v ce(sat)2 -- 0.17 1 i c =2a, i b =0.5a v ce(sat)3 -- 0.55 -- base-emitter saturation voltage i c =1a, i b =0.25a v be(sat)1 -- -- 1.1 v i c =2a, i b =0.5a v be(sat)2 -- -- 1.2 dc current gain v ce =5v, i c =10ma hfe 10 -- -- v ce =5v, i c =1a 15 -- 30 v ce =5v, i c =2a 5 -- -- forward voltage drop i f =2a vf -- -- 2 v turn on time v cc =250v, i c =1a, i b1 =i b2 =0.2a, t p =25us duty cycle<1% t on -- 0.2 0.6 us storage time t stg -- 2.7 4.5 us fall time t f -- 0.16 0.3 us notes: pulsed duration =380us, duty cycle 2%
TS13005CK high voltage npn transistor 3/5 version: a13 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. safety operation area figure 2. dc current gain figure 3. vce(sat) v.s ic figure 4. vbe(sat) v.s ic figure 5. power derating
TS13005CK high voltage npn transistor 4/5 version: a13 to-126 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
TS13005CK high voltage npn transistor 5/5 version: a13 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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